Scanning tunneling microscopy and spectroscopy simulations of the silicon (111)-(7x7) surface
Date
2006
Authors
Liu, Weiming
University of Lethbridge. Faculty of Arts and Science
Journal Title
Journal ISSN
Volume Title
Publisher
Lethbridge, Alta. : University of Lethbridge, Faculty of Arts and Science, 2006
Abstract
Since 1982, the Si (111)-(7x7) surface has been extensively studied both theoretically and experimentally with the modern powerful tools of STM and Scanning Tunneling Spectroscopy (STS). In this work, a simple atomic orbital model for the Si (111)-(7x7) surface is developed to simulate the experimental results of STM and STS. Based on Tersoff-Hamann’s theory for the tunneling current, simulations of clean Si (111)-(7x7) constant-current images are presented. The direct, real-space simulated topographic images of the surface are compared to experimental results qualitatively and quantitatively. The simulation of spectroscopic imaging and normalized conductance spectra are also included. The adsorption of atomic hydrogen atoms onto the Si (111)-(7x7) surface is also simulated.
Description
xiv, 146 leaves ; 29 cm.
Keywords
Dissertations, Academic , Scanning tunneling microscopy , Silicon -- Surfaces , Surfaces (Physics) -- Research , Atomic hydrogen -- Absorption and adsorption